Power Device
ULVAC offers technical solutions for the production of Si power devices. ULVAC is the industry leader in the delivery of Si power devices, including IGBTs.
- Proton implantation
- 4-8 inch wafers
- Applicable for ultra thin wafers
- Operational temp. is 1200 – 1900°C (max. 2000°C)
- High temperature unifomity
- Cooling time is 115min from 1900 to 300°C
- High temperature uniformity
- Footprint 1.1m x 3.9m
- 100mm/150mm wafer available
- Hot plate and cooling and ESC equipped
- SiC devices
- 4 to 8 inch wafer size
- Ultra thin wafers
- High volume production
- Wide selection of tool configuration
- Stable etching rate
- High volume production
- Wide selection of tool configuration
- Stable etching rate
- ESC method available
- size 125 to 200 mm
- up to 5 process recipes
