Oxidation-Nitridization-Annealing System Ailesic 1400-1700
SiC power device recently became a key technology to realize a ‚low-carbon society‘. The Oxidation/Nitridization/Annealing system Ailesic 1400-1700 from our partner Toyoko Kagaku is our solution to assure you improved performance of the SiC thermal processes and a stable mass production in the activation anneal process.
- automatic C2C high throughput vertical furnace for up to 150mm substrates
- Oxidation, Oxynitriding (O2, N2O, NO), Annealing (Ar, N2)
- operational temp. for Ailesic-1400 is 700…1350°C (max. 1400°C)
- operational temp. for Ailesic-1700 is 700…1650°C (max. 1670°C)
- heating rate for Ailesic-1400 is ≤20°C and for Ailesic-1700 is ≤100°C
- batch size is 50 wafers for Ailesic-1400 and 25 wafers for Ailesic-1700
- high uniformity of ≤±0.5% for SiO2 within wafer
- very low metal contamination of ＜1.0E+11 atoms/cm2
- long life metal heater (>5 years)
- high temperature uniformity of ±3K
- insitu cleaning technology
- footprint 1.1m x 3.9m
Special Features / Further Applications
- Oxidation ( O2, Pyrogenic )
- Nitridization ( N2O, NO )
- Anneal ( N2, Ar, H2, NH3 )
- Post Oxidation Anneal
