uGmni -200, 300
Combined deposition and etch modules’ system of cluster type for advanced electronics uGmni-200, 300 Sputtering System, Load-lock type
uGmni is to equip with a variety of different process modules on the same transfer core which makes reducing spare parts by adopting the same common parts as much as possible as well as improves usability with the same operation panel between these different modules. This improves further efficiency for manufacturing process of advanced electronics.
SPECIAL FEATURES / FURTHER APPLICATIONS
APPLICATIONS
- Power device Seed & Metal layer Sputtering
- MEMS sensor PZT Sputtering & Etching
- Opt. device VCSEL Etching
- Packaging Descum Ashing
- Communication Insulated film PE-CVD and Etching
SPECIFICATION
*Not only below, if require others please contact us Below numbers depend on Spec.
| Ultimate pressure |
Stage temp. |
Within wafer unif. （Ref. only） |
Use | Plasma source | |
| Sputter | <6.7E-5Pa | Cold(Cooling ability T.B.D)～700℃ | ±1～5% | Metal, dielectric film, insulated film |
DC |
| Pulse DC | |||||
| RF | |||||
| Etcher | <1.0E-3Pa | -20～200℃ | <±5% | Metal, dielectric film, insulated film, Si types |
CCP |
| ISM (Inductively Super Magnetron、ULVAC Patent) |
|||||
| NLD (Neutral Loop Discharge、ULVAC Patent） |
|||||
| Asher | <0.7Pa | 50～250℃ | ±5% | Descum, desmear, removing sacrified layer, surface treatment, removing PR and PI etch | Microwave |
| 20～80℃ | Microwave+CCP | ||||
| PE-CVD | <2Pa | 60～400℃ | <±1% | Insulated film（SiNx,SiOx) | Anode coupling |
| Dual Frequency |
SYSTEM CONFIGURATIONS
Varieties of modules can be equipped
