A Batch System to Remove Native Oxide RISE-300

• Damage-free (remote plasma and low-temperature process)
• High throughput and low CoO
• Processing in batches of fifty wafers
• Superior uniformity of etching (5% or less per batch)
• Easy maintenance (no side maintenance access is required)
• Small foot print compare to cluster type equipment
• 50% lower self-aligned contact resistance compared to current wet process
• The Smallest foot print

SPECIAL FEATURES / FURTHER APPLICATIONS

• Pre-cleaning for self-aligned contact (SAC) formation
• Pre-cleaning for capacitor formation
• Pre-cleaning for epitaxial growth
• Pre-cleaning for Co or Ni salicide